CP219(2010) 查看數據表（PDF） - Central Semiconductor

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CP219
(Rev.:2010)

Power Transistor NPN - High Current Transistor Chip

Central Semiconductor 

PROCESS CP219

Power Transistor

NPN - High Current Transistor Chip

PROCESS DETAILS

Process

Die Size

Die Thickness

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

EPITAXIAL PLANAR

83 x 83 MILS

11 MILS

13.2 x 19.7 MILS

13.2 x 21.2 MILS

Al - 30,000Å

Au - 12,000Å

GEOMETRY

BACKSIDE COLLECTOR

GROSS DIE PER 4 INCH WAFER

1,670

PRINCIPAL DEVICE TYPES

2N5336

2N5337

2N5338

2N5339

2N5427

2N5428

2N5429

2N5430

D44H11

CJD44H11

w w w. c e n t r a l s e m i . c o m

R3 (22-March 2010)

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