CPD06(2003) 查看數據表（PDF） - Central Semiconductor
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CPD06
(Rev.:2003)
(Rev.:2003)
Central Semiconductor
CPD06 Datasheet PDF : 2 Pages
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PROCESS CPD06
General Purpose Rectifier
3 Amp Glass Passivated Rectifier Chip
CentralTM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
GLASS PASSIVATED MESA
87 x 87 MILS
10.4 MILS
69.5 x 69.5 MILS
Au - 5,000Å
Au - 2,000Å
GROSS DIE PER 4 INCH WAFER
1,490
PRINCIPAL DEVICE TYPES
1N5400 thru 1N5408
1N5550 thru 1N5554
1N5624 thru 1N5627
CMR3-02 Series
BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (16- September 2003)
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