L7055-04 查看數據表（PDF） - Hamamatsu Photonics
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L7055-04 Datasheet PDF : 2 Pages
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■FEATURES
●High output power (φep≦20W)
●High speed rise time (tr=0.5 ns typ.)
■APPLICATIONS
●Laser rader
●Range finder
●Excitation light source
●Optical trigger
●Security barrier
HIGH-POWER
INFRARED PULSED LASER DIODE
L7055-04
Figure 1: Dimensional Outline (Unit: mm)
Glass Window
LD Chip
9.0 +- 00.1
5.7 ± 0.2
2.8 ± 0.3
■ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Pulsed Foward Current
IFP
30
A
Reverse Voltage
VR
2
V
Pulsed Radiant Output Power φep
40
W
Pulse Duration (FWHM)
tw
100
ns
Duty Ratio
DR
0.075
%
Operating Temperature
Top -30 to +85 ℃
Storage Temperature
Tstg -40 to +125 ℃
0.45
2.54
Side View
1.0
NC (Case)
(Pin Connection)
Anode
Cathode
Bottom View
Anode
Cathode
■ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25℃)
Parameter
Pulsed Radiant Power
Peak Emission Wavelength
Spectral Radiation Half Bandwidth
Forward Voltage
Rise Time
Beam Spread Angle : Parallel
: Vertical
Lasing Threshold Current
Symbol
φep
λp
Δλ
VF
tr
θ//
θ⊥
Ith
Condition
IFP=20A
IFP=20A
FWHM
IFP=20A
Min.
20
-
-
-
-
6
29
-
Typ.
-
870
4
6
0.5
8
32
1
Note: General operating conditionφep≦20 W, tw≦50 ns, Repetition frequency≦8 kHz
Max.
-
-
-
-
-
10
35
-
Unit
W
nm
nm
V
ns
degree
degree
A
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.○C 1998 Hamamatsu Photonics K.K.
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