FQD45N03L 查看數據表（PDF） - Fairchild Semiconductor
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FQD45N03L Datasheet PDF : 11 Pages
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Typical Characteristic (Continued) TC = 25°C unless otherwise noted
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
40 VDD = 15V
30
TJ = 150oC
20
TJ = 25oC
10
TJ = -55oC
0
1
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
50
VGS = 10V
40
30
VGS = 5V
VGS = 4V
20
10
0
0
VGS = 3V
TC =
25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 6. Saturation Characteristics
40
ID = 10A
ID = 20A
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.5
20
1.0
10
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Drain To Source On Resistance vs Gate
Voltage And Drain Current
1.2
VGS = VDS, ID = 250µA
1.0
0.8
0.6
0.5
-80
VGS = 10V, ID =20A
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
Figure 8. Normalized Drain To Source On
Resistance vs Junction Temperatrue
1.2
ID = 250µA
1.1
1.0
0.4
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
Figure 9. Normalized Gate Threshold Voltage vs
Junction Temperature
0.9
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
Figure 10. Normalized Drain To Source
Breakdown Voltage vs Junction Temperature
©2004 Fairchild Semiconductor Corporation
FQD45N03L Rev. B1
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