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FDP6690 查看數據表(PDF) - Fairchild Semiconductor

零件编号
产品描述 (功能)
生产厂家
FDP6690
Fairchild
Fairchild Semiconductor Fairchild
FDP6690 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 2)
W DSS
Drain-Source Avalanche Energy
Single Pulse, VDD = 25 V, ID=11A
IAR
Drain-Source Avalanche Current
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 1mA
ID = 10mA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = –20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = 1mA
ID = 10mA, Referenced to 25°C
VGS = 10 V, ID = 21 A
VGS = 4.5 V, ID = 17 A
VGS=10 V, ID =21 A, TJ=125°C
VGS = 10 V, VDS = 10 V
VDS = 10 V, ID = 23 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qg s
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDS = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
VDS = 15 V, ID = 21A,
VGS = 5 V
Drain–Source Diode Characteristics
VSD
Drain–Source Diode Forward
Voltage
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V, IS = 3.5 A
VGS = 0 V, IS = 7 A
IF = 3.5 A,
diF/dt = 300 A/µs
(Note 1)
(Note 1)
(Note 2)
Min Typ Max Units
140
mJ
11
A
30
V
25
mV/°C
500 µA
100
nA
–100 nA
1
2.2
3
V
–4
mV/°C
12.0 15.5 m
18.5 23.0
18.0 22.5
60
A
33
S
1238
pF
342
pF
104
pF
11
20
ns
9
18
ns
23
37
ns
13
23
ns
11
15
nC
5
nC
4
nC
0.51 0.7
V
0.69
21
nS
25
nC
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. See “SyncFET Schottky body diode characteristics” below.
FDP6690S/FDB6690S Rev C (W)

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