FDP6690 查看數據表（PDF） - Fairchild Semiconductor
零件编号
产品描述 (功能)
生产厂家
FDP6690 Datasheet PDF : 6 Pages
| |||
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
FDP6690S.
TIME: 12.5ns/div
Figure 12. FDP6690S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP6035AL).
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.01
0.001
TA = 100oC
0.0001
0.00001
0
TA = 25oC
10
20
30
VDS, REVERSE VOLTAGE (V)
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
TIME: 12.5ns/div
Figure 13. Non-SyncFET (FDP6035AL)
body diode reverse recovery
characteristic.
FDP6690S/FDB6690S Rev C (W)
Share Link: 