CXD1172AM/AP
Electrical Characteristics
(VDD = 5V, VRB = 1.0V, VRT = 2.0V, Ta = 25°C)
Item
Conversion speed
Symbol
Fc
Supply current
Reference pin current
Analog input band width
(–1dB)
Analog input capacitance
Reference resistance
(VRT to VRB)
Offset voltage∗1
Digital input voltage
Digital input current
Digital output current
IDD
IREF
BW
CIN
RREF
EOT
EOB
VIH
VIL
IIH
IIL
IOH
IOL
Output data delay
TDL
Conditions
VDD = 4.75 to 5.25V
Ta = –20 to +75°C
VIN = 1.0 to 2.0V
fIN = 1kHz ramp
Fc = 20MSPS
NTSC ramp wave input
Min. Typ. Max. Unit
0.5
20 MSPS
7
12
mA
3
4
5.7
Envelope
18
MHz
VIN = 1.5V + 0.07Vrms
4
pF
175 250 325 Ω
Potential difference to VRT
Potential difference to VRB
0 –20 –40
mV
15 35 55
VDD = 4.75 to 5.25V
Ta = –20 to +75°C
4.0
V
1.0
VIH = VDD
VDD = max.
VIL = 0V
5
µA
5
VOH = VDD + 0.5V –1.1
VDD = min.
mA
VOL = 0.4V
3.7
With TTL 1 gate and 10pF load
Ta = –20 to +75°C
VDD = 4.75 to 5.25V
18 30 ns
Integral non-linearity error EL
Differential non-linearity
error
ED
Differential gain error
DG
Differential phase error
DP
Aperture jitter
Taj
Sampling delay
Tsd
End point
NTSC 40 IRE mod ramp
Fc = 14.3MSPS
±0.3 ±0.5
LSB
±0.3 ±0.5
1.0
%
1.0
deg
40
ps
4
ns
∗1 The offset voltage EOB is a potential difference between VRB and a point of position where the voltage
drops equivalent to 1/2 LSB of the voltage when the output data changes from "00000000" to "00000001".
EOT is a potential difference between VRT and a potential of point where the voltage rises equivalent to
1/2 LSB of the voltage when the output data changes from "11111111" to "11111110".
–4–