CXK5T16100TM- 查看數據表（PDF） - Sony Semiconductor

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CXK5T16100TM-

65536-word × 16-bit High Speed CMOS Static RAM

Sony Semiconductor 

Data Retention Waveform

• Low supply voltage data retention waveform

tCDRS

Data retention mode

tR

VCC

2.7V

2.0V

VDR

CE

GND

CE ≥ VCC – 0.2V

CXK5T16100TM

Data Retention Characteristics

Item

Symbol

Test condition

Data retention voltage VDR CE ≥ VCC – 0.2V

–25 to +85°C

ICCDR1 VCC = 3.0V

Data retention current

–25 to +70°C

+25°C

ICCDR2 VCC = 2.0 to 3.6V

Data retention

setup time

tCDRS

Chip disable to data

retention mode

Recovery time

tR

∗1 VCC = 3.3V, Ta = 25°C

(Ta = –25 to +85°C)

Min. Typ. Max. Unit

2.0

—

3.6 V

—

—

24

—

—

12 µA

—

0.4

—

— 0.48∗1 28 µA

0

—

— ns

5

—

— ms

–9–

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