CXK5T81000ATN 查看數據表（PDF） - Sony Semiconductor

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CXK5T81000ATN

131072-word × 8-bit High Speed CMOS Static RAM

Sony Semiconductor 

CXK5T81000ATN/AYN

Electrical Characteristics

• DC Characteristics

Item

Symbol

(VCC = 2.7 to 3.6V, GND = 0V, Ta = –25 to +85°C)

Test conditions

Min. Typ.∗1 Max. Unit

Input leakage current

ILI

VIN = GND to VCC

–1

—

+1 µA

Output leakage current

ILO

CE1 = VIH or CE2 = VIL or

OE = VIH or WE = VIL

VI/O = GND to VCC

–1

—

+1 µA

Operating power supply

current

ICC1

CE1 = VIL, CE2 = VIH

VIN = VIH or VIL

IOUT = 0mA

Min. cycle

ICC2

duty = 100%

IOUT = 0mA

10LLX

12LLX

—

1

3 mA

—

25∗2 35∗3

mA

—

25

35

Average operating current

ICC3

Cycle time 1µs

duty = 100%

IOUT = 0mA

CE1 ≤ 0.2V

CE2 ≥ Vcc – 0.2V

VIL ≤ 0.2V

VIH ≥ Vcc – 0.2V

—

5

10 mA

Standby current

CE2 ≤ 0.2V

–25 to +85°C —

—

28

ISB1

{or

CE1 ≥ Vcc – 0.2V –25 to +70°C

CE2 ≥ Vcc – 0.2V +25°C

—

—

—

0.48

14 µA

—

ISB2

CE1 = VIH or CE2 = VIL

— 0.12 1.4 mA

Output high voltage

VOH

IOH = –2.0mA

2.4

—

—V

Output low voltage

VOL

IOL = 2.0mA

∗1 VCC = 3.3V, Ta = 25°C

∗2 ICC2 = 30mA for 3.3V operation (VCC = 3.3V ± 0.3V)

∗3 ICC2 = 40mA for 3.3V operation (VCC = 3.3V ± 0.3V)

—

—

0.4 V

I/O capacitance

Item

Symbol Test conditions Min.

Input capacitance

CIN

VIN = 0V

—

I/O capacitance

CI/O

VI/O = 0V

—

Note) This parameter is sampled and is not 100% tested.

(Ta = 25°C, f = 1MHz)

Typ. Max. Unit

—

8 pF

—

10 pF

–3–

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