CXK5V8257BM 查看數據表（PDF） - Sony Semiconductor

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CXK5V8257BM

32768-word × 8-bit High Speed CMOS Static RAM

Sony Semiconductor 

CXK5V8257BTM/BYM/BM

• Write cycle (2): CE control

Address

OE

CE

WE

Data in

tWC

tAW

tAS

tCW

tWR1(∗3)

tWP

tDW

tDH

Data valid

Data out

High impedance

∗1 Write is executed when both CE and WE are at low simultaneously.

∗2 Do not apply the data input voltage of the opposite phase to the output while I/O pin is in output condition.

∗3 tWR1 is measured at the period from the rising edge of CE to the end of write cycle.

–6–

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