CY14B101L(2007) 查看數據表（PDF） - Cypress Semiconductor

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CY14B101L
(Rev.:2007)

1-Mbit (128K x 8) nvSRAM

Cypress Semiconductor 

PRELIMINARY

CY14B101L

Capacitance [7]

Parameter

Description

CIN

Input Capacitance

COUT

Output Capacitance

Thermal Resistance [7]

Parameter

Description

ΘJA Thermal Resistance

(junction to ambient)

ΘJC Thermal Resistance

(junction to case)

Test Conditions

TA = 25°C, f = 1 MHz, VCC = 0 to 3.0 V

Max

Unit

7

pF

7

pF

Test Conditions

Test conditions follow standard test methods and proce-

dures for measuring thermal impedance, in accordance with

EIA/JESD51.

32-SOIC

TBD

TBD

48-SSOP

TBD

TBD

Unit

°C/W

°C/W

AC Test Loads

3.0V

OUTPUT

30 pF

R1 577Ω

R2

789Ω

3.0V

OUTPUT

5 pF

R1 577Ω FOR TRI-STATE

SPECS

R2

789Ω

AC Test Conditions

Input Pulse Levels.................................................. 0 V to 3 V

Input Rise and Fall Times (10% – 90%)...................... < 5 ns

Input and Output Timing Reference Levels................... 1.5 V

Note

8. These parameters are guaranteed but not tested.

Document #: 001-06400 Rev. *E

Page 8 of 18

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