CY62256LL-55SNE 查看數據表（PDF） - Cypress Semiconductor

零件编号

产品描述 (功能)

生产厂家

CY62256LL-55SNE

256K (32K x 8) Static RAM

Cypress Semiconductor 

CY62256

Thermal Resistance

Description

Thermal Resistance

(Junction to Ambient)[5]

Thermal Resistance

(Junction to Case)[5]

Test Conditions

Still Air, soldered on a 4.25 x 1.125

inch, 4-layer printed circuit board

Symbol

ΘJA

ΘJC

DIP

75.61

43.12

SOIC

76.56

36.07

TSOP

93.89

24.64

RTSOP

93.89

24.64

Unit

°C/W

°C/W

AC Test Loads and Waveforms

5V

OUTPUT

100 pF

INCLUDING

JIG AND

SCOPE

R1 1800 Ω

R2

990Ω

(a)

R1 1800 Ω

5V

OUTPUT

3.0V

5 pF

R2

990Ω

INCLUDING

JIG AND

SCOPE (b)

10%

GND

< 5 ns

Equivalent to:

THÉVENIN EQUIVALENT

ALL INPUT PULSES

90%

90%

10%

< 5 ns

Data Retention Characteristics

OUTPUT

639Ω

1.77V

Parameter

Description

Conditions[6]

Min. Typ.[2] Max. Unit

VDR

ICCDR

VCC for Data Retention

Data Retention Current L

LL

2.0

V

VCC = 3.0V, CE > VCC − 0.3V,

VIN > VCC − 0.3V, or VIN < 0.3V

2

50

µA

0.1

5

µA

LL - Ind’l

0.1

10

µA

tCDR[5]

tR[5]

LL - Auto

Chip Deselect to Data Retention Time

Operation Recovery Time

0.1

10

µA

0

ns

tRC

ns

Data Retention Waveform

DATA RETENTION MODE

VCC

3.0V

VDR > 2V

3.0V

tCDR

tR

CE

Notes:

6. No input may exceed VCC + 0.5V.

Document #: 38-05248 Rev. *C

Page 4 of 12

Share Link: