CY62256N 查看數據表（PDF） - Cypress Semiconductor
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CY62256N Datasheet PDF : 13 Pages
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CY62256N
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied..............................................-55°C to +125°C
Supply Voltage to Ground Potential
(Pin 28 to Pin 14) ........................................... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High-Z State[3] ....................................–0.5V to VCC + 0.5V
DC Input Voltage[3].................................–0.5V to VCC + 0.5V
Electrical Characteristics Over the Operating Range
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Range
Commercial
Ambient Temperature (TA)[7]
0°C to +70°C
Industrial
–40°C to +85°C
Automotive-A
–40°C to +85°C
Automotive-E
–40°C to +125°C
VCC
5V ± 10%
5V ± 10%
5V ± 10%
5V ± 10%
Parameter
Description
Test Conditions
-55
-70
Min. Typ.[2] Max. Min. Typ.[2] Max. Unit
VOH
Output HIGH Voltage VCC = Min., IOH = −1.0 mA
2.4
VOL
Output LOW Voltage VCC = Min., IOL = 2.1 mA
VIH
Input HIGH Voltage
2.2
2.4
0.4
VCC 2.2
+0.5V
V
0.4 V
VCC V
+0.5V
VIL
Input LOW Voltage
–0.5
IIX
Input Leakage Current GND < VI < VCC
–0.5
IOZ
Output Leakage Current GND < VO < VCC, Output Disabled –0.5
ICC
VCC Operating Supply VCC = Max.,
L-Comm’l/
Current
IOUT = 0 mA,
Ind’l
f = fMAX = 1/tRC
LL-Comm’l
0.8 –0.5
+0.5 –0.5
+0.5 –0.5
25
0.8 V
+0.5 µA
+0.5 µA
50 mA
25 50 mA
LL - Ind’l
25 50
25 50 mA
LL - Auto-A
25 50
25 50 mA
LL - Auto-E
25 50
mA
ISB1
Automatic CE
Max. VCC, CE > VIH, L
Power-down Current— VIN > VIH or VIN < VIL,
TTL Inputs
f = fMAX
LL-Comm’l
LL - Ind’l
0.3 0.5
0.4 0.6 mA
0.3 0.5 mA
0.3 0.5 mA
LL - Auto-A
0.3 0.5
0.3 0.5 mA
LL - Auto-E
0.3 0.5
mA
ISB2
Automatic CE
Max. VCC,
L
Power-down Current— CE > VCC − 0.3V
CMOS Inputs
VIN > VCC − 0.3V, or
LL-Comm’l
VIN < 0.3V, f = 0
LL - Ind’l
LL - Auto-A
0.1 10
0.1 10
2
50 µA
0.1
5 µA
0.1 10 µA
0.1 10 µA
LL - Auto-E
0.1 15
µA
Capacitance[8]
Parameter
Description
Test Conditions
CIN
COUT
Input Capacitance
Output Capacitance
TA = 25°C, f = 1 MHz,
VCC = 5.0V
Notes:
3. VIL (min.) = −2.0V for pulse durations of less than 20 ns.
4. TA is the “Instant-On” case temperature.
5. Tested initially and after any design or process changes that may affect these parameters.
Max.
Unit
6
pF
8
pF
Document #: 001-06511 Rev. *A
Page 3 of 13
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