CY62256N 查看數據表（PDF） - Cypress Semiconductor

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CY62256N

256K (32K x 8) Static RAM

Cypress Semiconductor 

CY62256N

Thermal Resistance[5]

Parameter

Description

ΘJA Thermal Resistance

(Junction to Ambient)

ΘJC Thermal Resistance

(Junction to Case)

Test Conditions

Still Air, soldered on a 4.25 x 1.125

inch, 4-layer printed circuit board

DIP

75.61

43.12

AC Test Loads and Waveforms

SOIC

76.56

36.07

TSOP

93.89

24.64

RTSOP Unit

93.89 °C/W

24.64 °C/W

5V

OUTPUT

R1 1800Ω

5V

OUTPUT

100 pF

INCLUDING

JIG AND

SCOPE

R2

990Ω

(a)

5 pF

INCLUDING

JIG AND

SCOPE

R1 1800Ω

R2

990Ω

(b)

3.0V

10%

GND

< 5 ns

ALL INPUT PULSES

90%

90%

10%

< 5 ns

Equivalent to:

THÉVENIN EQUIVALENT

OUTPUT

639Ω

1.77V

Data Retention Characteristics

Parameter

Description

Conditions[6]

Min. Typ.[2] Max. Unit

VDR

ICCDR

VCC for Data Retention

2.0

V

Data Retention Current L

LL-Comm’l

VCC = 2.0V, CE > VCC − 0.3V,

VIN > VCC − 0.3V, or VIN < 0.3V

2

50

µA

0.1

5

µA

LL - Ind’l/Auto-A

0.1

10

µA

tCDR[8]

tR[8]

LL - Auto-E

Chip Deselect to Data Retention Time

Operation Recovery Time

0.1

10

µA

0

ns

tRC

ns

Data Retention Waveform

VCC

CE

3.0V

tCDR

DATA RETENTION MODE

VDR > 2V

3.0V

tR

Note:

6. No input may exceed VCC + 0.5V.

Document #: 001-06511 Rev. *A

Page 4 of 13

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