CY62256VNLL(2011) 查看數據表（PDF） - Cypress Semiconductor
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CY62256VNLL Datasheet PDF : 14 Pages
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CY62256VN
Capacitance
Parameter[6]
Description
CIN
COUT
Input capacitance
Output capacitance
Test Conditions
TA = 25 °C, f = 1 MHz, VCC = 3.0 V
Max
Unit
6
pF
8
pF
Thermal Resistance
Parameter[6]
Description
JA
Thermal resistance
(junction to ambient)
JC
Thermal resistance
(junction to case)
Test Conditions
Still air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
SOIC TSOPI RTSOPI Unit
68.45 87.62 87.62 C/W
26.94 23.73 23.73 C/W
R1
VCC
OUTPUT
50 pF
INCLUDING
JIG AND
SCOPE
Figure 1. AC Test Loads and Waveforms
ALL INPUT PULSES
VCC
90%
90%
10%
R2
GND
10%
< 5 ns
< 5 ns
Equivalent to:
THÉVENIN EQUIVALENT
Rth
OUTPUT
Vth
Parameter
R1
R2
RTH
VTH
Value
1100
1500
645
1.750
Units
Ohms
Ohms
Ohms
Volts
Data Retention Characteristics
(Over the Operating Range)
Parameter
Description
Conditions[7]
Min
Typ[8]
Max
Unit
VDR
ICCDR
tCDR[6]
tR[6]
VCC for data retention
Data retention current
Chip deselect to data
retention time
Operation recovery time
VCC = 1.4 V,
CE > VCC – 0.3 V,
VIN > VCC – 0.3 V
or VIN < 0.3 V
1.4
–
Commercial
–
0.1
Indusrial/
–
Automotive-A
Automotive-E –
0
–
tRC
–
–
V
3
A
6
50
–
ns
–
ns
Notes
6. Tested initially and after any design or process changes that may affect these parameters.
7. No input may exceed VCC + 0.3 V.
8. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC Typ, TA = 25 °C, and tAA = 70 ns.
Document Number: 001-06512 Rev. *D
Page 5 of 14
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