CY7C107D-10VXI 查看數據表（PDF） - Cypress Semiconductor
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CY7C107D-10VXI Datasheet PDF : 14 Pages
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CY7C107D
CY7C1007D
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions
Min
VDR
VCC for data retention
2.0
ICCDR
Data retention current
VCC = VDR = 2.0 V, CE > VCC – 0.3 V,
VIN > VCC – 0.3 V or VIN < 0.3 V
tCDR [12]
Chip deselect to data retention time
0
tR [13]
Operation recovery time
tRC
Data Retention Waveform
DATA RETENTION MODE
VCC
4.5V
VDR > 2V
4.5V
tCDR
tR
CE
Switching Waveforms
Figure 1. Read Cycle No. 1 (Address Transition Controlled) [14, 15]
ADDRESS
DATA OUT
tRC
tAA
tOHA
PREVIOUS DATA VALID
Figure 2. Read Cycle No. 2 [15, 16]
DATA VALID
Max
Unit
V
3
mA
ns
ns
ADDRESS
CE
DATA OUT
VCC
SUPPLY
CURRENT
tRC
tACE
tLZCE
HIGH IMPEDANCE
tPU
50%
DATA VALID
tHZCE
HIGH
IMPEDANCE
tPD
ICC
50%
ISB
Notes
12. AC characteristics (except High-Z) are tested using the load conditions shown in Figure (a). High-Z characteristics are tested for all speeds using the test load
shown in Figure (c)
13. Full device operation requires linear VCC ramp from VDR to VCC(min) > 50 s or stable at VCC(min) > 50 s.
14. Device is continuously selected, CE = VIL.
15. WE is HIGH for read cycle.
16. Address valid prior to or coincident with CE transition LOW.
Document #: 38-05469 Rev. *H
Page 7 of 14
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