IRFD120 查看數據表（PDF） - Intersil
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IRFD120 Datasheet PDF : 6 Pages
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IRFD120
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
Pulse Source to Drain Current
ISD
ISDM
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
D
Diode
G
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
TJ = 25oC, ISD = 1.3A, VGS = 0V (Figure 12)
TJ = 150oC, ISD = 1.3A, dISD/dt = 100A/µs
TJ = 150oC, ISD = 1.3A, dISD/dt = 100A/µs
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. VDD = 25V, starting TJ = 25oC, L = 32mH, RG = 25Ω, peak IAS = 1.3A.
MIN TYP MAX UNITS
-
-
1.3
A
-
-
5.2
A
-
-
2.5
V
-
280
-
ns
-
1.6
-
µC
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
1.5
1.2
0.9
0.6
0.3
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
10
1
0.1 OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
100µs
1ms
10ms
100ms
0.01
TJ = MAX RATED
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
DC
100
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
20
VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
16
VGS = 9V
VGS = 8V
12
VGS = 7V
8
VGS = 6V
4
VGS = 5V
VGS = 4V
0
0
10
20
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. OUTPUT CHARACTERISTICS
4-277
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