CY7C1328G 查看數據表（PDF） - Cypress Semiconductor
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CY7C1328G Datasheet PDF : 16 Pages
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CY7C1328G
Pin Definitions
Pin
A0, A1, A
BWA
BWB
GW
BWE
CLK
CE1
CE2
CE3
OE
ADV
ADSP
ADSC
ZZ
DQs
DQP[A:B]
VDD
VSS
VDDQ
VSSQ
TQFP
Type
Description
37,36,32,33
34,35,44,45,
46,47,48,49,
50,80,81,82,
99,100
Input- Address Inputs used to select one of the 256K address locations. Sampled at
Synchronous the rising edge of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3
are sampled active. A[1:0] are fed to the two-bit counter.
93,94
Input- Byte Write Select Inputs, active LOW. Qualified with BWE to conduct byte writes
Synchronous to the SRAM. Sampled on the rising edge of CLK.
88
Input- Global Write Enable Input, active LOW. When asserted LOW on the rising edge
Synchronous of CLK, a global write is conducted (ALL bytes are written, regardless of the values
on BW[A:B] and BWE).
87
Input- Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This
Synchronous signal must be asserted LOW to conduct a byte write.
89
Input- Clock Input. Used to capture all synchronous inputs to the device. Also used to
Clock increment the burst counter when ADV is asserted LOW, during a burst operation.
98
Input- Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in
Synchronous conjunction with CE2 and CE3 to select/deselect the device. ADSP is ignored if CE1
is HIGH. CE1 is sampled only when a new external address is loaded.
97
Input- Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in
Synchronous conjunction with CE1 and CE3 to select/deselect the device. CE2 is sampled only
when a new external address is loaded.
92
Input- Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in
Synchronous conjunction with CE1 and CE2 to select/deselect the device. CE3 is sampled only
when a new external address is loaded.
86
Input- Output Enable, asynchronous input, active LOW. Controls the direction of the
Asynchronous I/O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, DQ
pins are tri-stated, and act as input data pins. OE is masked during the first clock of
a read cycle when emerging from a deselected state.
83
Input- Advance Input signal, sampled on the rising edge of CLK, active LOW. When
Synchronous asserted, it automatically increments the address in a burst cycle.
84
Input- Address Strobe from Processor, sampled on the rising edge of CLK, active
Synchronous LOW. When asserted LOW, addresses presented to the device are captured in the
address registers. A[1:0] are also loaded into the burst counter. When ADSP and
ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE1 is
deasserted HIGH.
85
Input- Address Strobe from Controller, sampled on the rising edge of CLK, active
Synchronous LOW. When asserted LOW, addresses presented to the device are captured in the
address registers. A[1:0] are also loaded into the burst counter. When ADSP and
ADSC are both asserted, only ADSP is recognized.
64
Input- ZZ “sleep” Input, active HIGH. When asserted HIGH places the device in a
Asynchronous non-time-critical “sleep” condition with data integrity preserved. During normal
operation, this pin has to be low or left floating. ZZ pin has an internal pull-down.
58,59,62,63
68,69,72,73,
74,8,9,
12,13
18,19,22,23,
24
I/O-
Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that
Synchronous is triggered by the rising edge of CLK. As outputs, they deliver the data contained
in the memory location specified by the addresses presented during the previous
clock rise of the read cycle. The direction of the pins is controlled by OE. When OE
is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQP[A:B] are
placed in a tri-state condition.
15,41,65,91 Power Supply Power supply inputs to the core of the device.
17,40,67,90 Ground Ground for the core of the device.
4,11,20,27, I/O Power Power supply for the I/O circuitry.
54,61,70,77 Supply
5,10,21,26, I/O Ground Ground for the I/O circuitry.
55,60,71,76
Document #: 38-05523 Rev. *E
Page 4 of 16
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