HCF40100B 查看數據表（PDF） - STMicroelectronics
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HCF40100B Datasheet PDF : 11 Pages
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HCF40100B
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
Symbol
Parameter
VDD (V)
tPLH tPHL Propagation Delay Time
5
10
15
tTHL tTLH Transition Time
5
10
15
tsetup Data Setup Time
5
10
15
thold Data Hold Time
5
10
15
tW Clock Input Pulse Width
5
Low Level
10
15
tW Clock Input Pulse Width
5
High Level
10
15
fCL Maximum Clock Input
5
Frequency
10
15
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.
Test Condition
Value (*)
Unit
Min.
100
20
10
275
100
75
450
230
190
280
150
140
1
2.5
3
Typ.
360
165
115
100
50
40
50
10
5
170
75
50
225
115
95
140
75
70
2
5
6
Max.
720
330
230
200
100
80
ns
ns
ns
ns
ns
ns
MHz
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and probe capacitance)
RL = 200KΩ
RT = ZOUT of pulse generator (typically 50Ω)
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