CY7C29 查看數據表（PDF） - Cypress Semiconductor
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CY7C29 Datasheet PDF : 17 Pages
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CY7C419/21/25/29/33
Switching Characteristics Over the Operating Range[7, 8]
Parameter
Description
–10
Min Max
tRC
Read Cycle Time
20
tA
Access Time
10
tRR
Read Recovery Time
10
tPR
tLZR[6,9]
tDVR[9,10]
tHZR[6,9,10]
Read Pulse Width
Read LOW to Low Z
Data Valid After Read HIGH
Read HIGH to High Z
10
3
5
15
tWC
Write Cycle Time
20
tPW
Write Pulse Width
10
tHWZ[6,9]
Write HIGH to Low Z
5
tWR
Write Recovery Time
10
tSD
Data Set-Up Time
6
tHD
Data Hold Time
0
tMRSC
MR Cycle Time
20
tPMR
MR Pulse Width
10
tRMR
MR Recovery Time
10
tRPW
Read HIGH to MR HIGH
10
tWPW
Write HIGH to MR HIGH
10
tRTC
Retransmit Cycle Time
20
tPRT
Retransmit Pulse Width
10
tRTR
Retransmit Recovery Time
10
tEFL
MR to EF LOW
20
tHFH
MR to HF HIGH
20
tFFH
MR to FF HIGH
20
tREF
Read LOW to EF LOW
10
tRFF
Read HIGH to FF HIGH
10
tWEF
Write HIGH to EF HIGH
10
tWFF
Write LOW to FF LOW
10
tWHF
Write LOW to HF LOW
10
tRHF
Read HIGH to HF HIGH
10
tRAE
Effective Read from Write HIGH
10
tRPE
Effective Read Pulse Width After EF HIGH 10
tWAF
Effective Write from Read HIGH
10
tWPF
Effective Write Pulse Width After FF HIGH 10
tXOL
Expansion Out LOW Delay from Clock
10
tXOH
Expansion Out HIGH Delay from Clock
10
–15
Min Max
25
15
10
15
3
5
15
25
15
5
10
8
0
25
15
10
15
15
25
15
10
25
25
25
15
15
15
15
15
15
15
15
15
15
15
15
–20
Min Max
30
20
10
20
3
5
15
30
20
5
10
12
0
30
20
10
20
20
30
20
10
30
30
30
20
20
20
20
20
20
20
20
20
20
20
20
–25
Min Max
35
25
10
25
3
5
18
35
25
5
10
15
0
35
25
10
25
25
35
25
10
35
35
35
25
25
25
25
25
25
25
25
25
25
25
25
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
7. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V and output loading of the specified IOL/IOH and 30 pF load capacitance,
as in part (a) of AC Test Load and Waveforms, unless otherwise specified.
8. See the last page of this specification for Group A subgroup testing information.
9. tHZR transition is measured at +200 mV from VOL and –200 mV from VOH. tDVR transition is measured at the 1.5V level. tHWZ and tLZR transition is measured at
±100 mV from the steady state.
10. tHZR and tDVR use capacitance loading as in part (b) of AC Test Load and Waveforms.
Document #: 38-06001 Rev. *C
Page 5 of 17
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