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CY7C401 查看數據表(PDF) - Cypress Semiconductor

零件编号
产品描述 (功能)
生产厂家
CY7C401
Cypress
Cypress Semiconductor Cypress
CY7C401 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
CY7C401/CY7C403
CY7C402/CY7C404
AC Test Loads and Waveforms
R1 437
5V
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
(a)
R1 437
5V
OUTPUT
R2
272
5 pF
R2
272
INCLUDING
JIG AND
SCOPE
(b)
C401–6
3.0V
GND
5 ns
ALL INPUT PULSES
90%
10%
90%
10%
5 ns
C401–7
Equivalent to: THÉVENIN EQUIVALENT
OUTPUT
167
1.73V
C401–8
Switching Characteristics Over the Operating Range[2, 6]
Parameter
Description
Test
7C401–5
7C402–5 7C40X–10 7C40X–15 7C40X–25[7]
Conditions Min. Max. Min. Max. Min. Max. Min. Max. Unit
fO
Operating Frequency
Note 8
5
10
15
25 MHz
tPHSI
SI HIGH Time
20
20
20
11
ns
tPLSI
SO LOW Time
45
30
25
20
ns
tSSI
Data Set-Up to SI
Note 9
0
0
0
0
ns
tHSI
Data Hold from SI
Note 9
60
40
30
20
ns
tDLIR
Delay, SI HIGH to IR LOW
75
40
35
21/22 ns
tDHIR
Delay, SI LOW to IR HIGH
75
45
40
28/30 ns
tPHSO
SO HIGH Time
20
20
20
11
ns
tPLSO
SO LOW Time
45
25
25
20
ns
tDLOR
Delay, SO HIGH to OR LOW
75
40
35
19/21 ns
tDHOR
Delay, SO LOW to OR HIGH
80
55
40
34/37 ns
tSOR
Data Set-Up to OR HIGH
0
0
0
0
ns
tHSO
Data Hold from SO LOW
5
5
5
5
ns
tBT
Bubble-Through Time
200 10 95 10 65 10 50/60 ns
tSIR
Data Set-Up to IR
Note 10
5
5
5
5
ns
tHIR
Data Hold from IR
Note 10 30
30
30
20
ns
tPIR
Input Ready Pulse HIGH
20
20
20
15
ns
tPOR
Output Ready Pulse HIGH
20
20
20
15
ns
tPMR
MR Pulse Width
40
30
25
25
ns
tDSI
MR HIGH to SI HIGH
40
35
25
10
ns
tDOR
MR LOW to OR LOW
85
40
35
35 ns
tDIR
MR LOW to IR HIGH
85
40
35
35 ns
tLZMR
MR LOW to Output LOW
Note 11
50
40
35
25 ns
tOOE
Output Valid from OE LOW
35
30
20 ns
tHZOE
Output High Z from OE HIGH
Note 12
30
25
15 ns
Notes:
6. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V and output loading of the specified IOL/IOH and 30-pF load
capacitance, as in part (a) of AC Test Loads and Waveforms.
7. Commercial/Military
8. I/fO > tPHSI + tDHIR, I/fO > tPHSO + tDHOR
9. tSSI and tHSI apply when memory is not full.
10. tSIR and tHIR apply when memory is full, SI is high and minimum bubble-through (tBT) conditions exist.
11. All data outputs will be at LOW level after reset goes HIGH until data is entered into the FIFO.
12. HIGH-Z transitions are referenced to the steady-state VOH –500 mV and VOL +500 mV levels on the output. tHZOE is tested with 5-pF load capacitance as
in part (b) of AC Test Loads and Waveforms.
3

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