DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

CY7C421-20JXI 查看數據表(PDF) - Cypress Semiconductor

零件编号
产品描述 (功能)
生产厂家
CY7C421-20JXI
Cypress
Cypress Semiconductor Cypress
CY7C421-20JXI Datasheet PDF : 21 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Switching Characteristics
Over the Operating Range
Parameter [6]
tRC
tA
tRR
tPR
tLZR[7]
tDVR[7, 8]
tHZR[7, 8]
tWC
tPW
tHWZ[7]
tWR
tSD
tHD
tMRSC
tPMR
tRMR
tRPW
tWPW
tRTC
tPRT
tRTR
tEFL
tHFH
tFFH
tREF
tRFF
tWEF
tWFF
tWHF
tRHF
tRAE
tRPE
tWAF
tWPF
tXOL
tXOH
Description
Read Cycle Time
Access Time
Read Recovery Time
Read Pulse Width
Read LOW to Low Z
Data Valid after Read HIGH
Read HIGH to High Z
Write Cycle Time
Write Pulse Width
Write HIGH to Low Z
Write Recovery Time
Data Setup Time
Data Hold Time
MR Cycle Time
MR Pulse Width
MR Recovery Time
Read HIGH to MR HIGH
Write HIGH to MR HIGH
Retransmit Cycle Time
Retransmit Pulse Width
Retransmit Recovery Time
MR to EF LOW
MR to HF HIGH
MR to FF HIGH
Read LOW to EF LOW
Read HIGH to FF HIGH
Write HIGH to EF HIGH
Write LOW to FF LOW
Write LOW to HF LOW
Read HIGH to HF HIGH
Effective Read from Write HIGH
Effective Read Pulse Width after EF HIGH
Effective Write from Read HIGH
Effective Write Pulse Width after FF HIGH
Expansion Out LOW Delay from Clock
Expansion Out HIGH Delay from Clock
CY7C421
-15
Min
Max
25
15
10
15
3
5
15
25
15
5
10
8
0
25
15
10
15
15
25
15
10
25
25
25
15
15
15
15
15
15
15
15
15
15
15
15
-20
Min
Max
Unit
30
ns
20
ns
10
ns
20
ns
3
ns
5
ns
15
ns
30
ns
20
ns
5
ns
10
ns
12
ns
0
ns
30
ns
20
ns
10
ns
20
ns
20
ns
30
ns
20
ns
10
ns
30
ns
30
ns
30
ns
20
ns
20
ns
20
ns
20
ns
20
ns
20
ns
20
ns
20
ns
20
ns
20
ns
20
ns
20
ns
Notes
6.
Test conditions
as in part (a) of
assume signal transition time of 3 ns or less, timing
Figure 4 on page 7, unless otherwise specified.
reference
levels
of
1.5
V
and
output
loading
of
the
specified
IOL/IOH
and
30
pF
load
capacitance,
7.
tH1Z0R0trmaVnsfirtoiomn
is measured at +200
the steady state.
mV
from
VOL
and
–200
mV
from
VOH.
tDVR
transition
is
measured
at
the
1.5V
level.
tHWZ
and
tLZR
transition
is
measured
at
8. tHZR and tDVR use capacitance loading as in part (b) of Figure 4 on page 7.
Document Number: 38-06001 Rev. *H
Page 8 of 21

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]