D45VH1 查看數據表（PDF） - Inchange Semiconductor

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D45VH1

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

isc Product Specification

D45VH Series

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

D45VH 1

-30

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

D45VH 4

D45VH 7

IC= -25mA ;IB=B 0

-45

V

-60

D45VH 10

-80

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -8A ;IB= -0.8A

VCE(sat)-2

VBE(sat)

ICEV

IEBO

Collector-Emitter Saturation Voltage IC= -15A ;IB= -3A;TC=100℃

Base-Emitter Saturation Voltage

Collector Cutoff Current

IC= -8A ;IB= -0.8A

IC= -8A ;IB= -0.8A;TC=100℃

VCE=RatedVCE;VBE(off)=-4V

VCE=RatedVCE;VBE(off)=-4V;TC=100℃

Emitter Cutoff Current

VEB= -7V; IC= 0

-1.0 V

-1.5 V

-1.0

-1.5

V

-10

-100

μA

-10 μA

hFE-1

DC Current Gain

IC= -2A ; VCE= -1V

35

hFE-2

DC Current Gain

IC= -4A ; VCE= -1V

20

COB

Output Capacitance

IE= 0;VCB= -10V,ftest= 1.0MHz

fT

Current-Gain—Bandwidth Product IC= 0.1A;VCE= -10V;ftest= 20MHz

Switching Times

275

pF

50

MHz

td

Delay Time

tr

Rise Time

ts

Storage Time

tf

Fall Time

IC= -8A; IB1= -IB2= -0.8A

VCC= -20V

50

ns

250 ns

700 ns

90

ns

isc Website：www.iscsemi.cn

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