DB3S 查看數據表（PDF） - Rectron Semiconductor

零件编号

产品描述 (功能)

生产厂家

DB3S

TRIGGER DIODES

Rectron Semiconductor 

TRIGGER DIODES

DB3S

FEATURES

* VBO: 32V/34V/40V VERSIONS

* Low Breakover Current

LL-34

DESCRIPTION

High reliability glass passivation insuring parameter stability

and protection against junction contamination

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)

RATING

Repetitive Peak On-State Current tp=20uA,F=100Hz

Power Dissipation (@ TA=50oC)

Derate Above +50oC

Storage Temperature Range

Junction Temperature

ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)

SYMBOL

ITRM

P

T S TG

TJ

RATING

SYMBOL

Breakover Voltage(Forward and Reverse)

VBO

at IBO,C=22nF**

Maximum Breakover Voltage Symmetry delta VBO= +VBO - -VBO C=22nF delta VBO

Minimum Dynamic Breakover Voltage delta I=IBO to IF=10mA (see Fig3) delta V+/-

Minimum Output Voltage* (see Fig 2)

VO

Peak Breakover Current at Breakorver Voltage* C=22nF**

IBO

Rise Time* (see Fig3)

tr

Leakage Current* VB=0.5VBO max (see Fig1)

IB

NOTES: 1. *Electrical characteristic applicable in both forward and reverse derections.

2.**Connected in parallel with the devices.

3. "Fully ROHS compliant", "100% Sn plating (Pb-free)".

.020 (0.50)

.014 (0.35)

.138 (3.51)

.120 (3.30)

.059 (1.50)

.055 (1.40)

Dimensions in inches and (millimeters)

VALUE

2

150

4.0

-40 to + 125

125

UNITS

A

mW

mW/oC

oC

oC

VALUE

DB3S-1

Min

Max

30

34

+/-2

5

5

25

1.5

10

DB3S-2

Min

Max

28

36

100

UNITS

Volts

Volts

Volts

Volts

uA

uS

uA

2007-1

Share Link: