DCR1596SW52 查看數據表（PDF） - Dynex Semiconductor

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DCR1596SW52

Phase Control Thyristor

Dynex Semiconductor 

DCR1596SW

SURGE RATINGS

Symbol

Parameter

IRRM/IRRM

dV/dt

Peak reverse and off-state current

Max. linear rate of rise of off-state voltage

dI/dt

Rate of rise of on-state current

VT(TO)

rT

t

gd

Threshold voltage

On-state slope resistance

Delay time

t

Turn-off time

q

IL

Latching current

I

Holding current

H

Test Conditions

Min. Max. Units

At VRRM/VDRM, Tcase = 125˚C

-

To 67% V , T = 125˚C, gate open

-

DRM j

From 67% VDRM to 2x IT(AV) Repetitive 50Hz

-

Gate source 20V, 10Ω, Non-repetitive

-

400 mA

1000 V/µs

120 A/µs

300 A/µs

tr < 0.5µs, Tj = 125˚C

At T = 125˚C

vj

At Tvj = 125˚C

VD = 67% VDRM, gate source 30V, 15Ω

tr = 0.5µs, Tj = 25˚C

I = 5000A, t = 3.5ms, T =125˚C,

T

p

j

VR = 900V, dIRR/dt = 4A/µs,

VDR = 67% VDRM,

dV /dt

DR

=

20V/µs

linear

Tj = 25˚C, VD = 5V

Tj = 25˚C, RG–K = ∞, ITM = 500A, IT = 5A

-

1.0

V

- 0.225 mΩ

0.5 1.5 µs

500 1000 µs

100 1000 mA

20 150 mA

4/10

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