DCR1596SW 查看數據表（PDF） - Dynex Semiconductor
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DCR1596SW Datasheet PDF : 10 Pages
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DCR1596SW
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT
IGT
VGD
V
FGM
VFGN
VRGM
I
FGM
PGM
PG(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
VDRM = 5V, Tcase = 25oC
V = 5V, T = 25oC
DRM
case
At VDRM Tcase = 125oC
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 8 and 9
-
Max.
4
400
0.25
30
0.25
5
30
150
10
Units
V
mA
V
V
V
V
A
W
W
CURVES
10000
Tj = 125˚C
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
0.5
1
1.5
2
2.5
3
3.5
Instantaneous on-state voltage, VT - (V)
Fig.2 Maximum (limit) on-state characteristics
4000
3500
Tj = 125˚C
3000
2500
2000
1500
1000
500
0
0.6 0.8
1
1.2 1.4 1.6 1.8
2
Instantaneous on-state voltage, VT - (V)
Fig.3 Maximum (limit) on-state characteristics
V EQUATION
TM
VTM = A + Bln (IT) + C.IT+D.√IT
Where
A = –0.5011559
B = 0.2638417
C = 2.536711x10-4
D = –0.01249303
these values are valid for Tj = 125˚C for IT 500A to 10000A
5/10
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