DCR1596SW 查看數據表（PDF） - Dynex Semiconductor
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DCR1596SW Datasheet PDF : 10 Pages
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DCR1596SW
10000
100
Conditions:
IT = 3000A
Max
VR = 500V
Tj = 125˚C
75
7.5
Min
1000
50
5.0
I2t
100
0.1
IT
QS
tp ≥ 2ms
dI/dt
IRR
1.0
10
100
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.10 Stored charge
0.1
2.5
25
0
0
1
10 1
5 10
50
ms
Cycles at 50Hz
Duration
Fig.11 Surge (non-repetitive) on-state current vs time
(with 50% VRRM at Tcase = 125˚C)
0.01
0.001
Anode side cooled
Double side cooled
0.0001
0.00001
0.001
0.01
Conduction Effective thermal resistance
Junction to case - ˚C/W
Double sided Single sided
d.c.
0.0080
0.0160
half wave
0.0088
0.0168
3 phase 120˚ 0.0090
0.0170
6 phase 60˚
0.0100
0.0180
0.1
1.0
10
Time - (s)
Fig.12 Maximum (limit) transient thermal impedance -
junction to case (˚C/W)
8/10
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