EL2004C 查看數據表（PDF） - Elantec -> Intersil
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EL2004C Datasheet PDF : 16 Pages
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EL2004 EL2004C
350 MHz FET Buffer
g5V DC Electrical Characteristics
VS e g5V TMIN k TA k TMAX VIN e 0V RL e 50X unless otherwise specified
Parameter Description
Test Conditions
Min
EL2004
Test
Typ Max
Level
Min
EL2004C
Typ Max
Test
Level
Units
VOS
AV
RIN
ROUT
VO
Output Offset
Voltage
RS s 100 kX TJ e 25 C
RS s 100 kX
10 30
I
35
I
10 30
I
mV
35 III mV
Voltage Gain
VIN e g1V RL e 1 kX 0 90 0 95 1 0
I 0 90 0 95 1 0 II V V
VIN e g1V
0 80 0 88 0 95 I 0 80 0 88 0 95 II V V
Input Impedance TJ e 25 C VIN e g1V 108 1011
I
1010 1011
I
X
Output
Impedance
VIN e g1 VDC
DRL e 50X to Infinity
4
8
I
4
10
II
X
Output Voltage
Swing
VIN e g4V
g2 0 g2 9
I g2 0 g2 9
III
V
IIN
Input Current
TJ e 25 C (Note 2)
250
I
500
I
pA
TA e 25 C (Note 3)
2 5 IV
5
IV
nA
TJ e TA e TMAX
10
I
20 III nA
PSRR
Power Supply
Rejection Ratio
VS e g5V to g15V
RL e 1 kX
60
V
60
V
dB
IS
Supply Current RL e 1 kX
17 5 20
I
17 5 20
II
mA
Note 1 When operating at elevated temperatures the power dissipation of the EL2004 must be limited to the values shown in the
typical performance curve ‘‘Maximum Power Dissipation vs Temperature’’ Junction to case thermal resistance is 31 C W
when dissipation is spread among the transistors in a normal AC steady-state condition In special conditions where heat is
concentrated in one output device junction temperature should be calculated using a thermal resistance of 70 C W
Note 2 Specification is at 25 C junction temperature due to requirements of high-speed automatic testing Actual values at operating
temperatures will exceed the value at TJ e 25 C When supply voltages are g15V no-load operating junction temperatures
may rise 40 C to 60 C above ambient and more under load conditions Accordingly VOS may change one to several mV and
IIN will change significantly during warm-up Refer to IIN vs Temperature graph for expected values
Note 3 Measured in still air seven minutes after application of power See graph of Input Current During Warm-up for further
information
Note 4 Bandwidth is calculated from the rise time The EL2004 has a single pole gain and phase response up to the b3 dB
frequency
Note 5 Slew rate is measured between VOUT e a2 5V and b2 5V for this test
Note 6 Slew rate is measured between VOUT e a1V and b1V for this test Pulse repetition rate is k50 MHz
g15V AC Electrical Characteristics
VS e g15V RL e 1 kX RS e 50X TJ e 25 C unless otherwise specified
Parameter
Description
Test Conditions
Min
EL2004
Typ Max
Test
Level
Min
EL2004C
Typ Max
Test
Level
Units
BW
Bandwidth
(Note 4)
200 350
I 200 350
I MHz
RL e 50X
140 200
ts
Settling Time to 1% DVIN e 1V tr e 3 ns
6
Cin
Input Capacitance
3
I 140 200
V
6
V
3
I MHz
V
ns
V
pF
3
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