DF3A6.8FUT1 查看數據表（PDF） - ON Semiconductor
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DF3A6.8FUT1 Datasheet PDF : 4 Pages
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DF3A6.8FUT1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
VRWM
IR
VBR
IT
IF
VF
ZZT
ZZK
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Forward Current
Forward Voltage @ IF
Maximum Zener Impedance @ IZT
Maximum Zener Impedance @ IZK
I
IF
VC VBR VRWM
IIRT VF
V
IPP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward Voltage
Zener Voltage (Note 4)
Operating Resistance (Note 5)
Reverse Current
Clamping Voltage
VF
IF = 10 mA
0.8
0.9
V
VZ
IZT = 5 mA
6.4
6.8
7.2
V
ZZK
IZK = 0.5 mA
200
W
ZZT
IZT = 5 mA
50
W
IR1
VRWM = 5 V
0.5
mA
VC
IPP = 2.0 A (Figure 1)
IPP = 9.37 A (Figure 2)
9.6
V
16
V
ESD Protection
Human Body Model (HBM)
Contact − IEC61000−4−2
Air Discharge
kV
16
30
30
4. VZ measured at pulse test current IZT at an ambient temperature of 25°C.
5. ZZT and ZZK is measured by dividing the AC voltage drop across the device by the AC current supplied. AC frequency = 1.0 kHz.
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