DG2720 查看數據表（PDF） - Vishay Semiconductors
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DG2720 Datasheet PDF : 8 Pages
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TEST CIRCUITS
DG2720
Vishay Siliconix
V+
VHSD1±
VHSD2±
V+
HSD1±
D±
HSD2±
OE
GND S
RL
50 Ω
VO
CL
35 pF
Logic VINH
Input
VINL
VNC = VNO
VO
Switch 0 V
Output
90 %
tD
tr < 5 ns
tf < 5 ns
tD
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make Interval
V+
Vgen
Rgen
+
VIN = 0 - V+
HSD1± V+
or HSD2±
D±
OE
GND S
VOUT
CL = 1 nF
VOUT
IN
On
VOUT
Off
On
Q = OUT x CL
Figure 3. Charge Injection
IN depends on switch configuration: input polarity
determined by sense of switch.
V+
10 nF
V+
HSD1± or HSD2±
OE
D±
RL
GND S
Analyzer
VD±
Off Isolation = 20 log VHSD2± or HSD1±
Figure 4. Off-Isolation
0 V, 2.4 V
V+
10 nF
V+
D±
0 V, 2.4 V
OE
S
HSD1±
or HSD2±
GND
Meter
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
Figure 5. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74593.
Document Number: 74593
S-81473-Rev. C, 23-Jun-08
www.vishay.com
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