DG411DY 查看數據表（PDF） - Vishay Semiconductors

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DG411DY

Precision Monolithic Quad SPST CMOS Analog Switches

Vishay Semiconductors 

DG411/412/413

Vishay Siliconix

TEST CIRCUITS

VS1

VS2

Vg

+5 V

VL

S1

IN1

S2

IN2

GND

+15 V

V+

D1

VO1

D2

VO2

V–

–15 V

RL2

300 W

CL2

35 pF

RL1

300 W

CL1

35 pF

Logic

3V

Input

0V

VS1

VO1

Switch

0V

Output

VS2

VO2

Switch

0V

Output

CL (includes fixture and stray capacitance)

FIGURE 3. Break-Before-Make (DG413)

+5 V

+15 V

VO

50%

90%

90%

tD

tD

DVO

Rg

VL

S

IN

3V

GND

V+

D

VO

CL

10 nF

V–

INX

OFF

OFF

INX

ON

OFF

ON

Q = DVO x CL

OFF

–15 V

INX dependent on switch configuration Input polarity determined

by sense of switch.

FIGURE 4. Charge Injection

+5 V

C

VS

Rg = 50 W

0V, 2.4 V

NC

0V, 2.4 V

VS

XTALK Isolation = 20 log

VO

C = RF bypass

VL

S1

IN1

S2

IN2

GND

+15 V

C

V+

D1

D2

V–

C

–15 V

FIGURE 5. Crosstalk

50 W

VO

RL

Document Number: 70050

S-52433—Rev. D, 06-Sep-99

www.vishay.com S FaxBack 408-970-5600

4-7

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