DG441BDJ(2003) 查看數據表（PDF） - Vishay Semiconductors
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DG441BDJ Datasheet PDF : 7 Pages
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DG441B/442B
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Power Supply Voltages
110
100
90
"5 V
80
70
60
"10 V
50
"15 V
40
"20 V
30
20
10
−20 −16 −12 −8 −4 0 4 8
VD − Drain Voltage (V)
12 16 20
rDS(on) vs. VD and Temperature
100
V+ = 15 V
90
V− = −15 V
80
70
60
125_C
50
85_C
40
25_C
30
−55_C
20
10
0
−15 −10
−5
0
5
10
15
VD − Drain Voltage (V)
rDS(on) vs. VD and Single Power Supply Voltages
250
225
V+ = 5 V
200
175
150
7V
125
10 V
100
12 V
75
15 V
50
25
0
0 2 4 6 8 10 12 14 16
VD − Drain Voltage (V)
Leakage Currents vs. Analog Voltage
80
V+ = 22 V
60
V− = −22 V
TA = 25_C
40
20
IS(off), ID(off)
0
−20
ID(on)
−40
Input Switching Threshold vs. Supply Voltage
2.5
2
1.5
1
0.5
0
4 6 8 10 12 14 16 18 20
V+ Positive Supply (V)
Leakage Currents vs. Temperature
1 nA
V+ = 15 V
V− = −15 V
VS, VD = "14 V
100 pA
10 pA
IS(off), ID(off)
−60
−80
−20 −15 −10 −5 0
5 10 15 20
Temperature (_C)
1 pA
−55 −35 −15
5 25 45 65
Temperature (_C)
85 105 125
www.vishay.com
4
Document Number: 72625
S-32553—Rev. A, 15-Dec-03
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