T221160A 查看數據表（PDF） - Taiwan Memory Technology
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T221160A Datasheet PDF : 14 Pages
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T221160A
DC CHARACTERISTICS
(Ta = 0 to 70°C, Vcc = 5V ±10%, Vss = 0V)
Parameter
-25
-30
-35
-40
Symbol
Unit
Min Max Min Max Min Max Min Max
Test Condition
Operating Current
Standby Current
Icc1 - 170 - 150 - 130 - 120 mA RAS , CAS cycling
tRC=min
TTL interface,
Standby Current
Icc2 - 4 - 4 - 4 - 4 mA RAS , CAS =VIH,
DOUT=High-Z
CMOS interface,
Icc3 - 2 - 2 - 2 - 2 mA
RAS , CAS > Vcc-0.2V
Fast Page Mode Current
Icc4
-
170
-
150
-
130
-
120
mA
RAS =VIL, CAS
cycling, tPC= min
RAS -only refresh
Current
Icc5
-
170
-
150
-
130
-
120
mA
CAS =VIH, RAS
cycling, tRC= min
CAS Before RAS
Refresh Current
RAS , CAS cycling,
Icc6
-
170
-
150
-
130
-
120
mA
tRC= min
Note: Icc depends on output load condition when the device is selected.
Icc max is specified at the output open condition, Icc is specified as an average current.
CAPACITANCE
(Ta =25°C, Vcc =5V, f = 1M HZ)
Parameter
Input Capacitance
(address)
Input Capacitance
( RAS , CAS , WE , OE )
Output Capacitance
(data-in/out)
Symbol
Typ
Max
Unit
CI1
-
5
pF
CI2
-
7
pF
CI/O
-
10
pF
Taiwan Memory Technology, Inc. reserves the right P. 4
to change products or specifications without notice.
Publication Date: FEB. 2002
Revision:A
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