T221160A 查看數據表（PDF） - Taiwan Memory Technology
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T221160A Datasheet PDF : 14 Pages
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T221160A
AC CHARACTERISTICS (continued)
AC CHARACTERISTICS
PARAMETER
Output Buffer Turn-off OE to
Write Command Setup Time
Write Command Hold Time
Write Command Hold Time (Reference
to RAS )
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
Data-in Setup Time
Data-in Hold Time
Data-in Hold Time (Reference to RAS )
RAS to WE Delay Time
Column Address to WE Delay Time
CAS to WE Delay Time
Transition Time (rise or fall)
Refresh Period (256 cycles)
RAS to CAS Precharge Time
CAS Setup Time (CBR REFRESH)
CAS Hold Time (CBR REFRESH)
OE Hold Time From WE During Read-
Modify-Write Cycle
OE Setup Prior to RAS During Hidden
Refresh Cycle
-25
-30
-35
-40
SYM MIN MAX MIN MAX MIN MAX MIN MAX UNIT Notes
tOFF2 - 6 - 8 - 8 - 8
tWCS 0
0
0
0
tWCH 4
4
4
6
tWCR 22
26
30
34
ns 16
ns 11,14
ns
ns 14
tWP 4
4
4
6
tRWL 5
6
7
9
tCWL 5
6
7
8
tDS
0
0
0
0
tDH 4
4
4
5
tDHR 22
26
30
34
tRWD 34
46
51
56
tAWD 21
29
31
35
tCWD 17
24
25
27
tT
1.5 50 1.5 50 2.5 50 2.5 50
tREF
4
4
4
4
tRPC 10
10
10
10
tCSR 5
10
10
10
tCHR 7
10
10
10
tOEH 4
4
4
5
ns 14
ns 14
ns 14
ns 12
ns 12
ns
ns 11
ns 11
ns 11
ns 2,3
ms
ns
ns 6
ns 6
ns 15
tORD 0
0
0
0
ns
Taiwan Memory Technology, Inc. reserves the right P. 6
to change products or specifications without notice.
Publication Date: FEB. 2002
Revision:A
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