3EZ11 查看數據表（PDF） - Transys Electronics

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3EZ11

GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

Transys Electronics 

For worst-case design, using expected limits of Iz, limits

of PD and the extremes of TJ ( TJL ) may be estimated.

Changes in voltage, Vz, can then be found from:

V = VZ TJ

VZ , the zener voltage temperature coefficient, is

found from Figures 5 and 6.

Under high power-pulse operation, the zener voltage

will vary with time and may also be affected significantly

be the zener resistance. For best regulation, keep current

excursions as low as possible.

Data of Figure 2 should not be used to compute surge

capability. Surge limitations are given in Figure 3. They

are lower than would be expected by considering only

junction temperature, as current crowding effects cause

temperatures to be extremely high in small spots

resulting in device degradation should the limits of Figure

3 be exceeded.

RATING AND CHARACTERISTICS CURVES

3EZ11 THRU 3EZ200

TEMPERATURE COEFFICIENT REAGES

(90% of the Units are int he Ranges Indicated)

Fig. 5-UNITS TO 12 VOLTS

Fig. 6-UNITS 10 TO 200 VOLTS

Fig. 7-VZ = 3.9 THRU 10 VOLTS

Fig. 8- VZ = 12 THRU 82 VOLTS

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