DMC2038LVT
Electrical Characteristics N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @Tc = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7 )
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min
BVDSS
20
IDSS
—
IGSS
—
VGS(th)
0.4
—
RDS (ON)
—
—
|Yfs|
—
VSD
0.4
Ciss
—
Coss
—
Crss
—
Rg
—
Qg
—
Qg
—
Qgs
—
Qgd
—
tD(on)
—
tr
—
tD(off)
—
tf
—
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Typ
Max
Unit
Test Condition
—
—
V VGS = 0V, ID = 250μA
—
1.0
μA VDS =16V, VGS = 0V
—
±100
nA VGS = ±12V, VDS = 0V
—
1.0
V
VDS = VGS, ID = 250μA
27
35
VGS = 4.5V, ID = 4.0A
33
43
mΩ VGS = 2.5V, ID = 2.5A
43
56
VGS = 1.8V, ID = 1.5A
9
—
S VDS = 5V, ID = 3.4A
—
1.1
V VGS = 0V, IS = 1A
400
530
70
90
65
100
pF
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
pF
1.9
—
Ω VDS = 0V, VGS = 0V, f = 1MHz
5.7
—
nC
12
17
nC
0.7
—
nC VDS = 15V,ID = 5.8A
1.4
—
nC
5
10
ns
8
16
ns VDS = 10V, VGS = 4.5V,
25
40
ns RG = 6Ω, IDS = 1A,
8
16
ns
30
VGS=10V
25
VGS=4.5V
VGS=4.0V
20
VGS=3.5V
15
10
VGS=3.0V
VGS=2.5V
VGS=2.0V
5
VGS=1.5V
0
0
0.5
1
1.5
2
VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
20
VDS= 5.0V
15
10
TA = -55C
TA = 25C
TA = 85C
TA = 150C
TA = 125C
5
0
0
0.5
1
1.5
2
2.5
3
VGS, GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
DMC2038LVT
Document number: DS35417 Rev. 6 - 2
3 of 10
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September 2013
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