DMG1013T-7 查看數據表（PDF） - Diodes Incorporated.
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DMG1013T-7 Datasheet PDF : 6 Pages
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Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Up To 3kV
• "Green" Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
DMG1013T
P-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
• Case: SOT-523
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.002 grams (approximate)
Drain
SOT-523
D
Gate
ESD PROTECTED TO 3kV
TOP VIEW
Gate
Protection
Diode
Source
Equivalent Circuit
G
S
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Steady
State
Pulsed Drain Current
TA = 25°C
TA = 85°C
Symbol
VDSS
VGSS
ID
IDM
Value
-20
±6
-0.46
-0.33
-6
Units
V
V
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
0.27
461
-55 to +150
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Units
W
°C/W
°C
DMG1013T
Document number: DS31784 Rev. 4 - 2
1 of 6
www.diodes.com
October 2009
© Diodes Incorporated
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