DMG1013T-7 查看數據表（PDF） - Diodes Incorporated.
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DMG1013T-7 Datasheet PDF : 6 Pages
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DMG1013T
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Symbol Min
BVDSS
-20
IDSS
-
IGSS
-
VGS(th)
-0.5
Static Drain-Source On-Resistance
RDS (ON)
-
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
-
VSD
Ciss
-
Coss
-
Crss
-
Qg
-
Qgs
-
Qgd
-
tD(on)
-
tr
-
tD(off)
-
tf
-
Notes: 4. Short duration pulse test used to minimize self-heating effect.
Typ
-
-
-
-
0.5
0.7
1.0
0.9
-0.8
59.76
12.07
6.36
622.4
100.3
132.2
5.1
8.1
28.4
20.7
Max
-
-100
±2.0
-1.0
0.7
0.9
1.3
-
-1.2
-
-
-
-
-
-
-
-
-
-
Unit
Test Condition
V
VGS = 0V, ID = -250μA
nA VDS = -20V, VGS = 0V
μA VGS = ±4.5V, VDS = 0V
V
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -350mA
Ω VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
S
VDS = -10V, ID = -250mA
V
VGS = 0V, IS = -150mA
pF
pF
VDS = -16V, VGS = 0V,
f = 1.0MHz
pF
pC
pC VGS = -4.5V, VDS = -10V,
pC ID = -250mA
ns
ns
VDD = -10V, VGS = -4.5V,
ns
ns
RL = 47Ω, RG = 10Ω,
ID = -200mA
1.5
VGS = -8.0V
1.2
VGS = -4.5V
VGS = -3.0V
0.9
VGS = -2.5V
0.6
VGS = -2.0V
0.3
0
0
VGS = -1.2V
VGS = -1.5V
1
2
3
4
5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
10
8
VDS = -5V
6
4
2
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
0
TA = -55°C
0
0.5
1
1.5
2
2.5
3
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
DMG1013T
Document number: DS31784 Rev. 4 - 2
2 of 6
www.diodes.com
October 2009
© Diodes Incorporated
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