CHA2091-99F 查看數據表（PDF） - United Monolithic Semiconductors
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CHA2091-99F Datasheet PDF : 8 Pages
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CHA2091
36-40GHz Low Noise Amplifier
Electrical Characteristics
Tamb = +25°C,
Bias Conditions:Vd = +4V Id=45mA
Symbol
Parameter
Fop Operating frequency range
G
Gain (1)
∆G
Gain flatness (1)
NF Noise figure (1)
VSWRin Input VSWR (1)
VSWRout Ouput VSWR (1)
IP3
P1dB
3rd order intercept point
Output power at 1dB gain compression
Id
Drain bias current
Min Typ Max Unit
36
40 Ghz
12
14
dB
± 0.5 ± 1.0 dB
3.0
4.0
dB
3.0:1
3.0:1
20
dBm
12
dBm
50
mA
(1) These values are representative of on-wafer measurements that are made without
bonding wires at the RF ports.When the chip is attached with typical 0.15nH input and
output bonding wires, the indicated parameters should be improved.
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Top Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA20919340 -06 Dec. 99
2/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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