TS421IDT 查看數據表（PDF） - STMicroelectronics
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TS421IDT Datasheet PDF : 32 Pages
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TS419-TS421
ELECTRICAL CHARACTERISTICS
VCC = +2.5V, GND = 0V, Tamb = 25°C (unless otherwise specified)1)
Symbol
Parameter
ICC
Supply Current
No input signal, no load
ISTANDBY
Standby Current
No input signal, VSTANDBY=GND for TS421
No input signal, VSTANDBY=Vcc for TS419
Voo
Output Offset Voltage
No input signal, RL = 16 or 32Ω, Rfeed=20kΩ
Output Power
THD+N = 0.1% Max, F = 1kHz, RL = 32Ω
THD+N = 1% Max, F = 1kHz, RL = 32Ω
PO
THD+N = 10% Max, F = 1kHz, RL = 32Ω
THD+N = 0.1% Max, F = 1kHz, RL = 16Ω
THD+N = 1% Max, F = 1kHz, RL = 16Ω
THD+N = 10% Max, F = 1kHz, RL = 16Ω
THD + N
Total Harmonic Distortion + Noise (Av=2)
RL = 32Ω, Pout = 30mW, 20Hz ≤ F ≤ 20kHz
RL = 16Ω, Pout = 40mW, 20Hz ≤ F ≤ 20kHz
PSRR
Power Supply Rejection Ratio (Av=2)
inputs grounded, F = 1kHz, Vripple = 200mVpp, Cb=1µF
SNR
Signal-to-Noise Ratio (Weighted A, Av=2)
(RL = 32Ω, THD +N < 0.5%, 20Hz ≤ F ≤ 20kHz)
ΦM
Phase Margin at Unity Gain
RL = 16Ω, CL = 400pF
Gain Margin
GM
RL = 16Ω, CL = 400pF
GBP
Gain Bandwidth Product
RL = 16Ω
Slew Rate
SR
RL = 16Ω
1. All electrical values are guaranted with correlation measurements at 2V and 5V
Min. Typ. Max. Unit
1.7
2.5
mA
10 1000
nA
5
25
mV
37
32
41
52
50
44
55
70
0.15
0.2
50
56
80
91
58
18
1.1
0.4
mW
%
dB
dB
Degrees
dB
MHz
V/µS
6/32
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