DS1230AB-P70 查看數據表（PDF） - Dallas Semiconductor -> Maxim Integrated
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DS1230AB-P70 Datasheet PDF : 12 Pages
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www.dalsemi.com
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Replaces 32k x 8 volatile static RAM,
EEPROM or Flash memory
Unlimited write cycles
Low-power CMOS
Read and write access times as fast as 70 ns
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
Full ±10% VCC operating range (DS1230Y)
Optional ±5% VCC operating range
(DS1230AB)
Optional industrial temperature range of
-40°C to +85°C, designated IND
JEDEC standard 28-pin DIP package
New PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides
lithium backup battery
- Standardized pinout for all nonvolatile
SRAM products
- Detachment feature on PowerCap allows
easy removal using a regular screwdriver
DS1230Y/AB
256k Nonvolatile SRAM
PIN ASSIGNMENT
A14 1
A12 2
A7 3
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
DQ0 11
DQ1
12
DQ2 13
GND 14
28
VCC
27 WE
26 A13
25 A8
24 A9
23 A11
22 OE
21 A10
20 CE
19 DQ7
18
DQ6
17
DQ5
16
DQ4
15
DQ3
28-Pin ENCAPSULATED PACKAGE
740-mil EXTENDED
NC
1
NC
2
NC
3
NC
4
VCC
5
WE
6
OE
7
CE
DQ7
8
9
DQ6
10
DQ5
11
DQ4
12
DQ3
13
GND VBAT
DQ2
14
DQ1
15
DQ0
16
GND
17
34
NC
33
NC
32
A14
31
A13
30
A12
29
A11
28
A10
27
A9
26
A8
25
A7
24
A6
23
A5
22
A4
21
A3
20
A2
19
A1
18
A0
34-Pin POWERCAP MODULE (PCM)
(USES DS9034PC POWERCAP)
PIN DESCRIPTION
A0 - A14
- Address Inputs
DQ0 - DQ7
- Data In/Data Out
CE
- Chip Enable
WE
- Write Enable
OE
- Output Enable
VCC
GND
- Power (+5V)
- Ground
NC
- No Connect
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