DS1609 查看數據表（PDF） - Dallas Semiconductor -> Maxim Integrated
零件编号
产品描述 (功能)
生产厂家
DS1609 Datasheet PDF : 7 Pages
| |||
DS1609
DS1609
Dual Port RAM
FEATURES
• Totally asynchronous 256–byte dual port memory
• Multiplexed address and data bus keeps pin count
low
• Dual port memory cell allows random access with
minimum arbitration
• Each port has standard independent RAM control sig-
nals
• Fast access time
• Low power CMOS design
• 24–pin DIP or 24–pin SOIC surface mount package
• Both CMOS and TTL compatible
• Operating temperature of –40°C to +85°C
• Standby current of 100 nA @ 25°C makes the device
ideal for battery backup or battery operate applica-
tions.
DESCRIPTION
The DS1609 is a random access 256–byte dual port
memory designed to connect two asyncronous ad-
dress/data buses together with a common memory ele-
ment. Both ports have unrestricted access to all
256 bytes of memory, and with modest system disci-
pline no arbitration is required. Each port is controlled
PIN ASSIGNMENT
PORT A
AD7A
1
AD6A
2
AD5A
3
AD4A
4
AD3A
5
AD2A
6
AD1A
7
AD0A
8
WEA
9
CEA
10
OEA
11
GND 12
PORT B
24
VCC
23
OEB
22
CEB
21
WEB
20
AD0B
19
AD1B
18
AD2B
17
AD3B
16
AD4B
15
AD5B
14
AD6B
13
AD7B
DS1609
24–PIN DIP (600 MIL)
See Mech. Drawings
Section
PORT A
AD7A
1
AD6A
2
AD5A
3
AD4A
4
AD3A
5
AD2A
6
AD1A
7
AD0A
8
WEA
9
CEA
10
OEA
11
GND
12
PORT B
24
VCC
23
OEB
22
CEB
21
WEB
20
AD0B
19
AD1B
18
AD2B
17
AD3B
16
AD4B
15
AD5B
14
AD6B
13
AD7B
DS1609S
24–PIN SOIC (300 MIL)
See Mech. Drawings
Section
PIN DESCRIPTION
AD0–AD7
– Port address/data
CE
– Port enable
WE
– Write enable
OE
– Output enable
VCC
GND
– +5 volt supply
– Ground
by three control signals: output enable, write enable,
and port enable. The device is packaged in plastic
24–pin DIP and 24–pin SOIC. Output enable access
time of 50 ns is available when operating at 5 volts.
020499 1/7
Share Link: 