DS1710 查看數據表（PDF） - Dallas Semiconductor -> Maxim Integrated
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DS1710 Datasheet PDF : 14 Pages
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DC ELECTRICAL CHARACTERISTICS
PARAMETER
Operating Current
Standby Current
Supply Voltage
Supply Current
Input Leakage
Output Leakage
PFO , WEO Output @ 2.4V
PFO , WEO Output @ 0.4V
VCC Trip Point (TOL=GND)
VCC Trip Point (TOL=VCC)
VCC Trip Point
CEI to CEO Impedance
DIS Pulldown Resistance
SYMBOL
ICC1
ICC2
VCCO
ICCO1
IIL
ILO
IOH
IOL
VCCTP1
VCCTP1
VCCTP2
ZCE
RDIS
MIN
VCC-0.2
-1.0
-1.0
-1.0
4.50
4.25
2.50
50k
DS1710
(0°C to 70°C; VCCI=4.5V to 5.5V)
TYP MAX UNITS NOTES
5
mA
3, 14
200
µA
3, 15
V
1
150
mA
4
+1.0
µA
+1.0
µA
mA
10, 16
4.0
mA
10, 16
4.62
4.75
V
1, 16
4.37
4.50
V
1, 16
2.60
2.70
V
1, 16
30
Ω
5
250k
Ω
(0°C to 70°C; VCCI=4.75V to 5.50V, TOL=GND)
AC ELECTRICAL CHARACTERISTICS
(VCCI=4.50V to 5.50V, TOL=VCCO)
PARAMETER
SYMBOL MIN
TYP MAX UNITS NOTES
Address Setup
tAS
0
ns
Address Hold
tAH
50
ns
Read Recovery
CEI , WEI Pulse Width
tRR
20
tCW
75
ns
9
ns
CEI to CEO Falling
tPDF
5
ns
10
Propagation Delay
Later of CEI , WEI to WEO
tPDF
20
ns
10, 11
Falling Propagation Delay
CEI to CEO Rising
tPDR
5
ns
10
Propagation Delay
Earlier of CEI , WEI to WEO
tPDR
5
ns
10, 11
Rising Propagation Delay
Write Recovery
tWR
10
ns
11
AC ELECTRICAL CHARACTERISTICS
PARAMETER
Recovery at Power-up
VCC Slew Rate Power-down
VCC Slew Rate Power-down
VCC Slew Rate Power-up
CEO Pulse Width
WEI Pulse Width
SYMBOL
tREC
tF
tFB
tR
tCE
tCE
MIN
100
300
10
0
(0°C to 70°C, 5V Operation)
TYP
MAX UNITS NOTES
200
ms
12
µs
µs
µs
13
1.5
µs
7, 8
1.5
µs
7, 8
6 of 14
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