DS1720 查看數據表（PDF） - Dallas Semiconductor -> Maxim Integrated
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DS1720 Datasheet PDF : 12 Pages
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DS1720
AC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Temperature Conversion Time
Data to CLK Setup
CLK to Data Hold
CLK to Data Delay
CLK Low Time
CLK High Time
CLK Frequency
CLK Rise and Fall
RST to CLK Setup
CLK to RST Hold
RST Inactive Time
CLK High to I/O High–Z
RST Low to I/O High–Z
Convert Pulse Width
NV Write Cycle Time
TTC
tDC
tCDH
tCDD
tCL
tCH
fCLK
tR, tF
tCC
tCCH
tCWH
tCDZ
tRDZ
tCNV
tWR
MIN
35
40
285
285
DC
100
40
125
250 ns
(–55°C to +125°C; VDD=2.7V to 5.5V)
TYP
MAX
UNITS NOTES
400
1000
ms
ns
6
ns
6
100
ns
6, 7, 8
ns
6
ns
6
1.75
MHz
6
500
ns
ns
6
ns
6
ns
6, 9
50
ns
6
50
ns
6
500 ms
10
50
ms
12
AC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN
(–55°C to +125°C; VDD=2.7V to 5.5V)
TYP
MAX
UNITS NOTES
Input Capacitance
CI
5
pF
I/O Capacitance
CI/O
10
pF
NOTES:
1. All voltages are referenced to ground.
2. Logic one voltages are specified at a source current of 1 mA.
3. Logic zero voltages are specified at a sink current of 4 mA.
4. ICC specified with DQ pin open and CLK pin at VDD.
5. ICC specified with VCC at 3.3V and RST=GND.
6. Measured at VIH = 2.0V or VIL = 0.6V.
7. Measured at VOH = 2.4V or VOL = 0.4V.
8. Load capacitance = 50 pF.
9. tCWH must be 10 ms minimum following any write command that involves the E2 memory.
10. See typical curve for specification limits outside 0°C to 85°C range.
11. Thermometer error reflects temperature accuracy as tested during calibration.
12. Writing to the nonvolatile memory should only take place in the 0°C to 70°C temperature range.
030598 11/12
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