CHA5297-99F 查看數據表（PDF） - United Monolithic Semiconductors
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CHA5297-99F Datasheet PDF : 4 Pages
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CHA5297
Electrical Characteristics
Tamb = +25°C, Vd = 3.5V Id =1.6A
37-40GHz High Power Amplifier
Symbol
Parameter
Fop Operating frequency range (1)
Min Typ Max Unit
37
40
GHz
G
Small signal gain (1)
10
dB
∆G
Small signal gain flatness (1)
±1
dB
Is
Reverse isolation
40
dB
P1dB Pulsed output power at 1dB compression (1)
28
dBm
P03 Output power at 3dB gain compression (1)
29
dBm
VSWRin Input VSWR (2)
3:1
VSWRout Output VSWR (2)
3.5:1
Tj
Junction temperature for 80°C backside
152
°C
Id
Bias current @ small signal
1.6
2
A
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Maximum drain bias voltage with Pin max=18dBm
+4.0
V
Id
Maximum drain bias current
2.2
A
Vg
Gate bias voltage
-2 to +0.4
V
Ig
Gate bias current
-5.5 to +5.5
mA
Vdg
Maximum drain to gate voltage (Vd - Vg)
+6.0
V
Pin
Maximum input power overdrive (2)
+22
dBm
Tch
Maximum channel temperature
+175
°C
Ta
Operating temperature range
-40 to +80
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA52972149 - 29-May-02
2/4
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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