DS2016-100 查看數據表（PDF） - Dallas Semiconductor -> Maxim Integrated
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DS2016-100 Datasheet PDF : 9 Pages
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OPERATION MODE
DS2016
MODE
READ
WRITE
DESELECT
STANDBY
CE
OE
WE
A0-A10
DQ-DQ7
POWER
L
L
H
STABLE DATA OUT
ICCO
L
X
L
STABLE
DATA IN
ICCO
L
H
H
X
HIGH-Z
ICCO
H
X
X
X
HIGH-Z
ICCS
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VCC
VIN , VI/O
TSTG
TOPR
TSOLDER
Power Supply Voltage
Input, Input/Output Voltage
Storage Temperature
Operating Temperature
Soldering Temperature/Time
RATING
-0.3V to +7.0V
-0.3 to VCC +0.3V
-55°C to +125°C
-40°C to +85°C
260 °C for 10 seconds
CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
CIN
CI/O
MIN
TYP
5
5
MAX
10
12
+5-VOLT OPERATION
(TA= 25°C)
UNITS NOTES
pF
pF
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL MIN TYP
Power Supply Voltage
Input High Voltage
VCC
4.5
5.0
VIH
2.0
Input Low Voltage
Data Retention Voltage
VIL
-0.3
VDR
2.0
(TA= -40°C to +85°C)
MAX UNITS NOTES
5.5
V
VCC+0.3
V
0.8
V
5.5
V
DC CHARACTERISTICS
PARAMETER
SYMBOL
Input Leakage Current
IIL
I/O Leakage Current
ILO
Output High Current
IOH
Output Low Current
IOL
Standby Current
ICCS1
Standby Current
ICCS2
Standby Current
ICCS2
Operating Current
ICCO
(TA= -40°C to +85°C; VCC = 5V ± 10%)
CONDITIONS
MIN TYP MAX UNITS
0V ≤ VIN ≤ VCC
CE = VIH, 0V ≤ VIO ≤ VCC
± 0.1
µA
± 0.5
µA
VOH = 2.4V
-1.0
mA
VOL = 0.4V
4.0
mA
CE = 2.0V
0.3
mA
CE ≥ VCC -0.5V tA =60°C
1
µA
CE ≥ VCC -0.5V tA =25°C
100
nA
CE = 0.8V, 200 ns cycle
55
mA
2 of 9
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