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DS2016-100 查看數據表(PDF) - Dallas Semiconductor -> Maxim Integrated
零件编号
产品描述 (功能)
生产厂家
DS2016-100
2k x 8 3V/5V Operation Static RAM
Dallas Semiconductor -> Maxim Integrated
DS2016-100 Datasheet PDF : 9 Pages
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DS2016
AC CHARACTERISTICS READ CYCLE
(T
A
= -40°C to +85°C; V
CC
= 5V
±
10%)
PARAMETER
DS2016-100
DS2016-150
SYMBOL
UNITS NOTES
MIN TYP MAX MIN TYP MAX
Read Cycle Time
t
RC
100
150
ns
Access Time
t
ACC
100
150 ns
OE
to Output Valid
t
OE
50
70
ns
CE
to Output Valid
t
CO
100
150 ns
CE
or
OE
to Output
t
COE
5
5
ns
Active
Output High-Z from
t
OD
5
Deselection
35 10
60
ns
Output Hold from
t
OH
5
10
ns
Address Change
AC CHARACTERISTICS WRITE CYCLE
(T
A
= -40°C to +85°C; V
CC
= 5V
±
10%)
PARAMETER
DS2016-100
DS2016-150
SYMBOL
UNITS NOTES
MIN TYP MAX MIN TYP MAX
Write Cycle Time
t
WC
100
150
ns
Write Pulse Width
t
WP
75
120
ns
Address Setup Time
t
AW
0
0
ns
Write Recovery
Time
t
WR
10
10
ns
Output High-Z from
WE
t
ODW
35
70
ns
Output Active from
WE
t
OEW
5
5
ns
Data Setup Time
t
DS
40
60
ns
Data Hold Time
t
DH
0
0
ns
DATA RETENTION CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
Data Retention Supply
Voltage
V
DR
CE
≥
V
CC
- 0.5V
Data Retention
Current at 5.5V
I
CCR1
CE
≥
V
CC
- 0.5V
Data Retention
Current at 2.0V
I
CCR2
CE
≥
V
CC
- 0.5V
Chip Deselect to Data
Retention
t
CDR
Recovery Time
t
R
* Typical values are at 25°C
(T
A
= -40°C to +85°C)
MIN TYP MAX UNITS
2.0
5.5
V
0.1* 1
µA
50* 750
nA
0
µs
2
ms
3 of 9
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