DS2016-100 查看數據表（PDF） - Dallas Semiconductor -> Maxim Integrated
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DS2016-100 Datasheet PDF : 9 Pages
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DS2016
AC CHARACTERISTICS WRITE CYCLE
PARAMETER
(TA = -40°C to +85°C; VCC = 2.7V to 3.5V)
SYMBOL MIN TYP MAX UNITS NOTES
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High-Z from WE
tWC
250
tWP
190
tAW
0
tWR
25
tODW
ns
ns
ns
ns
90
ns
Output Active from WE
tOEW
5
ns
Data Setup Time
tDS
100
ns
Data Hold Time
tDH
0
ns
DATA RETENTION CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
Data Retention
Supply Voltage
VDR
CE ≥ VCC - 0.3V
Data Retention
Current at 3.5V
ICCR1
CE ≥ VCC - 0.3V
Data Retention
Current at 2.0V
ICCR2
CE ≥ VCC - 0.3V
Chip Deselect to
Data Retention
tCDR
Recovery Time
tR
* Typical values are at 25°C
(TA = -40°C to +85°C)
MIN TYP MAX UNITS
2.0
3.5
V
50* 1000
nA
50* 750
nA
0
µs
2
ms
TIMING DIAGRAM: READ CYCLE
SEE NOTE 1
5 of 9
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