Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
零件编号
产品描述 (功能)
DS2120E 查看數據表(PDF) - Dallas Semiconductor -> Maxim Integrated
零件编号
产品描述 (功能)
生产厂家
DS2120E
Ultra3 LVD SCSI Terminator
Dallas Semiconductor -> Maxim Integrated
DS2120E Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
RECOMMENDED OPERATING CONDITIONS
PARAMETER
SYMBOL MIN
Termpower Voltage, LVD Mode V
TPWR
(LVD) 2.7
Logic 0
V
IL
-0.3
Logic 1
V
IH
2.0
Operating Temperature
V
AMB
0
DS2120
TYP
MAX
5.5
+0.8
V
tpwr
+ 0.3
70
UNITS
V
V
V
°C
NOTES
13
13
LOW-VOLTAGE DIFFERENTIAL CHARACTERISTICS
PARAMETER
SYMBOL MIN
TYP
Differential Mode
Termination Resistance
R
DM
100
Common Mode Termination
Resistance
R
CM
110
Differential Mode Bias
Common Mode Bias
Output Capacitance
Mode-Change Delay
V
DM
V
CM
C
OUT
M
CD
100
1.125
0.66
1.25
MAX
110
190
125
1.375
3
2
UNITS
?
?
mV
V
pF
ms
NOTES
2
1
1, 12
DC CHARACTERISTICS
PARAMETER
Termpower Current
Input Leakage High
Input Leakage Low
Output Current High
Output Current Low
DIFF_CAP LVD
Operating Range
DIFFSENSE Driver
Output Voltage
DIFFSENSE Driver
Source Current
DIFFSENSE Driver
Sink Current
SYMBOL
I
TPMR
I
IH
I
IL
I
OH
I
OL
V
LVDOR
V
DSO
I
DSH
I
DSL
MSTR/SLV Input Leakage
I
MSTRSLV
ISO Input Leakage
I
ISO
Thermal Shutdown
MIN
-1.0
4.0
0.7
1.2
5
20
-6.5
-125
TYP MAX UNITS NOTES
12
30
mA
2, 3
µA
14, 15
1.0
µA
14, 15
-1.0
mA
4, 6
mA
5, 6
1.9
V
1.4
V
7, 8
15
mA 7, 9, 11
200
µA 7, 10, 11
+125
µA
+6.5
µA
150
°C
7 of 10
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]