DS2229 查看數據表（PDF） - Dallas Semiconductor -> Maxim Integrated

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DS2229

Word-Wide 8 Meg SRAM Stik

Dallas Semiconductor -> Maxim Integrated 

LOW VCC DATA RETENTION CHARACTERISTICS

PARAMETER

SYMBOL MIN TYP MAX UNITS

VCC for Data Retention

VDR

2.0

-

-

V

Data Retention Current

ICCDR

-

1

8

µA

Chip Deselect to Data

tCDR

Retention Time

Operation Recovery Time

tR

0

-

-

ns

5

-

-

ms

DS2229

(tA= 0°C to 70°C)

TEST CONTIDION

CE0 - CE3 ≥ VCC -0.2V,

CS ≥ VCC -0.2V or 0V

≤ CS ≤ 0.2V VIN ≥ 0V

VCC = 3.0V, VIN ≥ 0V

CE0 - CE3 ≥ VCC -0.2V,

CS ≥ VCC -0.2V or 0V ≤

CS ≤ 0.2V tA =25°C

See Retention

Waveform

LOW VCC DATA RETENTION TIMING WAVEFORM (1) (CE0 - CE3 Controlled)

Figure 3

SEE NOTE 5

LOW VCC DATA RETENTION TIMING WAVEFORM (2) (CS Controlled) Figure 4

SEE NOTE 5

5 of 10

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